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1N4454 - Silicon Switching Diode

Download the 1N4454 datasheet PDF. This datasheet also covers the 1N4454-MA variant, as both devices belong to the same silicon switching diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/144.
  • Metallurgically Bonded.
  • Hermetically Sealed.
  • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -55°C to +175°C Operating Current: 200 mA @ TA = +75°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) VBR @ 5 μA Volts VRWM Volts (p.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N4454-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N4454 & 1N4454-1 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/144  Metallurgically Bonded  Hermetically Sealed  Double Plug Construction Maximum Ratings Operating & Storage Temperature: -55°C to +175°C Operating Current: 200 mA @ TA = +75°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) VBR @ 5 μA Volts VRWM Volts (pk) I0 VF1 @ IF = 10 mA VF2 @ IF = 10 mA TA = 150°C mA V dc V dc trr n sec IR1 @ 50 V IR2 @ 50 V Capacitance dc TA = 150°C @ 0 V μA μA pF 75 50 200 0.8 0.7 4 0.1 100 2 Outline 1 M/A-COM Technology Solutions Inc.