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2N6283 Datasheet Preview

2N6283 Datasheet

NPN Transistor

No Preview Available !

2N6283 & 2N6284
NPN Darlington Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/371
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Collector - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base - Emitter Voltage
Dynamic Characteristics
Magnitude of Common
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Output Capacitance
Switching Characteristics
Turn-On Time
Test Conditions
Symbol Units Min. Max.
IC = 100 mAdc
2N6283
2N6284
VCE = 40 Vdc, 2N6283
VCE = 50 Vdc, 2N6284
VCE = 80 Vdc, VBE = -1.5 Vdc, 2N6283
VCE = 100 Vdc, VBE = -1.5 Vdc, 2N6284
VEB = 7 Vdc
V(BR)CEO Vdc
80
100
ICEO mAdc
ICEX mAdc
IEBO mAdc
1.0
0.01
2.5
IC = 1 Adc, VCE = 3 Vdc
IC = 10 Adc, VCE = 3 Vdc
IC = 20 Adc, VCE = 3 Vdc
IC = 20 Adc, IB = 200 mAdc
IC = 10 Adc, IB = 40 mAdc
IC = 20 Adc, IB = 200 mAdc
IC = 10 Adc, IB = 3 Vdc
HFE
-
VCE(SAT) Vdc
VBE(SAT) Vdc
VBE Vdc
1500
1250
500
18000
3.0
2.0
4.0
2.8
IC = 10 Adc, VCE = 3 Vdc, f = 1 kHz
| HFE | -
8
80
IC = 10 Adc, VCE = 3 Vdc, f = 1 kHz
HFE
-
700
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz
COBO pF
350
VCC = 30 Vdc; IC = 10 Adc; IB1 = 40 mAdc
TON
µs
2
Turn-Off Time
VCC = 30 Vdc; IC = 10 Adc; IB1 = IB2 = 40 mAdc TOFF µs
10
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25 °C, I Cycle, t = 1.0 s
VCE = 8.75 Vdc, IC = 20 Adc
VCE = 30 Vdc, IC = 5.8 Adc
VCE = 80 Vdc, IC = 100 mAdc
VCE = 100 Vdc, IC = 100 mAdc
1 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0013431




MA-COM

2N6283 Datasheet Preview

2N6283 Datasheet

NPN Transistor

No Preview Available !

2N6283 & 2N6284
NPN Darlington Power Silicon Transistor
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TA = +25°C2
@ TA = +100°C
Operating & Storage Temperature Range
2. Derate linearly @ 1 mW / °C for TA >+25°C.
Symbol
VCEO
VCBO
VEBO
IC
IB
PT
TOP, TSTG
2N6283
2N6284
80
100
80
100
7
20
0.5
175
87.5
-65 to +200
Rev. V1
Units
Vdc
Vdc
Vdc
Adc
Adc
W
°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
RθJC
Max. Value
0.857°C/W
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0013431



Part Number 2N6283
Description NPN Transistor
Maker MA-COM
Total Page 3 Pages
PDF Download

2N6283 Datasheet PDF





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