MA4AGBLP912 Description
The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MA’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics.
MA4AGBLP912 Key Features
- Low Series Resistance
- Low Capacitance
- 5 Nanosecond Switching Speed
- Can be Driven by a Buffered +5 V TTL
- Silicon Nitride Passivation
- Polyimide Scratch Protection
- RoHS pliant