MA4AGBLP912 Datasheet | Tyco Electronics

Features n n n n n n n Outline ( Topview ) Ultra Low Capacitance < 22 f F Excellent RC Product < 0.10 p S High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver Silicon Nitride Passivation Polyamide Scratch Protection - + Description M/A-'s MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode. Al Ga As anodes, which utilize M/A-’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional Ga As devices. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance ( 4 Ω ), low capacitance ( 20 f F ), and extremely fast switching speed, ( 5 n S ). They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling. Absolute Maximum Ratings @ +25 °C1 Parameter Operating Temperature Maximum Rating -65 °C to +125 °C -65 °C to +150 °C +235 °C for 10 sec. + 23 d Bm C. W. 40 m A -50 V  Applications The ultra low capacitance of the MA4AGBLP912 device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The + 10 m A ( low loss state ) and the 0v ( isolation state ) bias of the diodes allows the use a simple + 5 V TTL gate driver. These Al Ga As diodes are used as switching arrays on radar systems, high-speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. Storage Temperature Mounting Temperature C.W. Incident RF Power Forward D.C. Current Reverse D.C. Voltage @ -10 µA 1. Exceeding any of these values may result in permanent damage Al Ga As Beam...