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MA4AGBLP912 - AlGaAs Beam Lead PIN Diode

General Description

M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode.

AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional GaAs devices.

Key Features

  • n n n n n n n Outline ( Topview ) Ultra Low Capacitance < 22 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver Silicon Nitride Passivation Polyamide Scratch Protection - +.

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www.DataSheet4U.com AlGaAs Beam Lead PIN Diode V 1.00 MA4AGBLP912 Features n n n n n n n Outline ( Topview ) Ultra Low Capacitance < 22 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver Silicon Nitride Passivation Polyamide Scratch Protection - + Description M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics.