MA4AGBLP912 Datasheet PDF - MA-COM AlGaAs Beamlead PIN Diode Specs

MA4AGBLP912 - AlGaAs Beamlead PIN Diode

This page provides the datasheet information for the MA4AGBLP912, a member of the MA4AGBLP912-MA AlGaAs Beamlead PIN Diode family.

Datasheet Summary

Description

The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode.

AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.

Features

Low Series Resistance.
Low Capacitance.
5 Nanosecond Switching Speed.
Can be Driven by a Buffered +5 V TTL.
Silicon Nitride Passivation.
Polyimide Scratch Protection.
RoHS Compliant.

Datasheet Details

Part number	MA4AGBLP912
Manufacturer	MA-COM
File Size	318.28 KB
Description	AlGaAs Beamlead PIN Diode
Datasheet	MA4AGBLP912 Datasheet
Additional preview pages of the MA4AGBLP912 datasheet.

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Full PDF Text Transcription

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AlGaAs Beamlead PIN Diode Features • Low Series Resistance • Low Capacitance • 5 Nanosecond Switching Speed • Can be Driven by a Buffered +5 V TTL • Silicon Nitride Passivation • Polyimide Scratch Protection • RoHS Compliant Applications • Aerospace & Defense • ISM Description The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The result is a diode with low series resistance, 4 Ω, low capacitance, 28 fF, and an extremely fast switching speed of 5nS.

Published: Mar 23, 2019 |