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MA4AGBLP912 Datasheet Algaas Beamlead Pin Diode

Manufacturer: MACOM Technology Solutions

Overview: AlGaAs Beamlead PIN Diode.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode.

AlGaAs anodes, which utilize MA’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.

This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics.

Key Features

  • Low Series Resistance.
  • Low Capacitance.
  • 5 Nanosecond Switching Speed.
  • Can be Driven by a Buffered +5 V TTL.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • RoHS Compliant.

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