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MA4AGBLP912 - AlGaAs Beamlead PIN Diode

Download the MA4AGBLP912 datasheet PDF. This datasheet also covers the MA4AGBLP912-MA variant, as both devices belong to the same algaas beamlead pin diode family and are provided as variant models within a single manufacturer datasheet.

General Description

The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode.

AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.

Key Features

  • Low Series Resistance.
  • Low Capacitance.
  • 5 Nanosecond Switching Speed.
  • Can be Driven by a Buffered +5 V TTL.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4AGBLP912-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MA4AGBL912 AlGaAs Beamlead PIN Diode
MA4AGFCP910 AlGaAs Flip Chip PIN Diodes
MA4AGP907 AlGaAs Flip Chip PIN Diodes
MA4AGSW4 SP4T AlGaAs PIN Diode Switch
MA4AGSW5 SP5T AlGaAs PIN Diode Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AlGaAs Beamlead PIN Diode Features • Low Series Resistance • Low Capacitance • 5 Nanosecond Switching Speed • Can be Driven by a Buffered +5 V TTL • Silicon Nitride Passivation • Polyimide Scratch Protection • RoHS Compliant Applications • Aerospace & Defense • ISM Description The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The result is a diode with low series resistance, 4 Ω, low capacitance, 28 fF, and an extremely fast switching speed of 5nS.