MA-COM

MA4AGSW5 Datasheet Preview

MA4AGSW5 Datasheet

SP5T AlGaAs PIN Diode Switch

No Preview Available !

MA4AGSW5

SP5T AlGaAs PIN Diode Switch

FEATURES

 Ultra Broad Bandwidth: 50 MHz to 50 GHz

 Functional Bandwidth : 50 MHz to 70 GHz

 1.7dB Insertion Loss at 50 GHZ

 35 dB Isolation at 50 GHz

 Low Current consumption.

 -10mA for low loss state

+10mA for Isolation state

 MACOM’s unique AlGaAs hetero-junction

anode technology.

 Silicon Nitride Passivation

 Polymer Scratch protection

 RoHS Compliant

DESCRIPTION

MACOM’s MA4AGSW5 is an Aluminum-Gallium-

Arsenide, single pole, five throw (SP5T), PIN diode

switch. The switch features enhanced AlGaAs anodes

which are formed using MACOM’s hetero-junction

technology. AlGaAs technology produces a switch

with less loss than a device fabricated using

conventional GaAs processes. As much as a 0.3 dB

reduction in insertion loss can be realized at 50 GHz.

This device is fabricated on an OMCVD epitaxial wafer

using a process designed for high device uniformity

and extremely low parasitics. The diodes within the

chip exhibit low series resistance, low capacitance,

and fast switching speed. They are fully passivated

with silicon nitride and have an additional polymer

layer for scratch protection. The protective coating

prevents damage during handling and assembly to the

diode junction and the chip anode air-bridges. Off chip

bias circuitry is required.

APPLICATIONS

The high electron mobility of AlGaAs and the low

capacitance of the PIN diodes used makes this switch

ideal for fast response, high frequency, multi-throw

switch designs where the series capacitance in each

off-arm will load the input. AlGaAs PIN diode switches

are an ideal choice for switching arrays in radar

systems, radiometers, test equipment and other multi-

assembly components.

Yellow areas indicate bond pads

Absolute Maximum Ratings @ TAMB = +25°C

Parameter

Operating Temperature

Storage Temperature

Incident C.W. RF Power

Breakdown Voltage

Bias Current

Assembly Temperature

Junction Temperature

Maximum Rating

-55°C to +125°C

-55°C to +150°C

+23dBm C.W.

25V

± 25mA

+300°C < 10 sec

+175°C

Maximum combined operating conditions for RF Power, D.C.

bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @

+85°C.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MA-COM

MA4AGSW5 Datasheet Preview

MA4AGSW5 Datasheet

SP5T AlGaAs PIN Diode Switch

No Preview Available !

MA4AGSW5

SP5T AlGaAs PIN Diode Switch

Electrical Specifications @ TA = 25°C, +/-10mA bias current

(On-wafer measurements)

RF PARAMETER

FREQUENCY

BAND

MAX

UNITS

PORT

BIAS

0.05 - 18 GHz

1.4

18 - 50 GHz

1.9

J2 to J1 -10 mA @ J2, +10 mA @ J3, J4, J5, J6

0.05 - 18 GHz

1.4

18 - 50 GHz

1.9

J3 to J1 -10 mA @ J3, +10 mA @ J2, J4, J5, J6

INSERTION LOSS

0.05 - 18 GHz

18 - 50 GHz

1.4

1.9

J4 to J1 -10 mA @ J4, +10 mA @ J2, J3, J5, J6

0.05 - 18 GHz

1.4

18 - 50 GHz

1.9

J5 to J1 -10 mA @ J5, +10 mA @ J2, J3, J4, J6

0.05 - 18 GHz

1.4

18 - 50 GHz

1.9

J6 to J1 -10 mA @ J6, +10 mA @ J2, J3, J4, J5

RF PARAMETER

FREQUENCY BAND

0.05 - 18 GHz

18 - 50 GHz

MIN

35.0

30.0

UNITS

PORT

J2 to J1

BIAS

-10 mA @ J6, +10 mA @ J3, J4, J5, J2

0.05 - 18 GHz

35.0

18 - 50 GHz

30.0

J3 to J1 -10 mA @ J6, +10 mA @ J2, J4, J5, J2

ISOLATION*

0.05 - 18 GHz

35.0

18 - 50 GHz

30.0

J4 to J1 -10 mA @ J6, +10 mA @ J2, J3, J5, J2

0.05 - 18 GHz

35.0

18 - 50 GHz

30.0

J5 to J1 -10 mA @ J6, +10 mA @ J2, J3, J4, J2

0.05 - 18 GHz

35.0

18 - 50 GHz

30.0

J6 to J1 -10 mA @ J2, +10 mA @ J2, J3, J4, J6

RF PARAMETER FREQUENCY BAND

MIN

UNITS

PORT

BIAS

0.05 - 18 GHz

12.0

18 - 50 GHz

12.0

J2 to J1 -10 mA @ J2, +10 mA @ J3, J4, J5, J6

0.05 - 18 GHz

12.0

18 - 50 GHz

12.0

J3 to J1 -10 mA @ J3, +10 mA @ J2, J4, J5, J6

INPUT/OUTPUT

0.05 - 18 GHz

12.0

RETURN LOSS

18 - 50 GHz

12.0

J4 to J1 -10 mA @ J4, +10 mA @ J2, J3, J5, J6

0.05 - 18 GHz

12.0

18 - 50 GHz

12.0

J5 to J1 -10 mA @ J5, +10 mA @ J2, J3, J4, J6

0.05 - 18 GHz

12.0

18 - 50 GHz

12.0

J6 to J1 -10 mA @ J6, +10 mA @ J2, J3, J4, J5

*Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series

junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction

diode port in low loss = 22 dB Typical.

Parameter

Switching Speed*

( 10-90 % RF Voltage )

F ( GHz )

10.0

RF Ports

Test Conditions

Typical

Value

J1 to J2,J3,J4,J5,J6 +/- 5V TTL Compatible PIN Diode Driver 15

Units

*Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible

driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 Ω ohms to

achieve 15 ns rise and fall times.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf

MA4AGSW5 Datasheet

SP5T AlGaAs PIN Diode Switch

MA4AGSW5 Datasheet

SP5T AlGaAs PIN Diode Switch

Similar Datasheet

Part Number Start With