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MA4AGSW5 Datasheet Preview

MA4AGSW5 Datasheet

SP5T AlGaAs PIN Diode Switch

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MA4AGSW5
SP5T AlGaAs PIN Diode Switch
V5
FEATURES
Ultra Broad Bandwidth: 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
1.7dB Insertion Loss at 50 GHZ
35 dB Isolation at 50 GHz
Low Current consumption.
-10mA for low loss state
+10mA for Isolation state
MACOM’s unique AlGaAs hetero-junction
anode technology.
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant
DESCRIPTION
MACOM’s MA4AGSW5 is an Aluminum-Gallium-
Arsenide, single pole, five throw (SP5T), PIN diode
switch. The switch features enhanced AlGaAs anodes
which are formed using MACOM’s hetero-junction
technology. AlGaAs technology produces a switch
with less loss than a device fabricated using
conventional GaAs processes. As much as a 0.3 dB
reduction in insertion loss can be realized at 50 GHz.
This device is fabricated on an OMCVD epitaxial wafer
using a process designed for high device uniformity
and extremely low parasitics. The diodes within the
chip exhibit low series resistance, low capacitance,
and fast switching speed. They are fully passivated
with silicon nitride and have an additional polymer
layer for scratch protection. The protective coating
prevents damage during handling and assembly to the
diode junction and the chip anode air-bridges. Off chip
bias circuitry is required.
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes used makes this switch
ideal for fast response, high frequency, multi-throw
switch designs where the series capacitance in each
off-arm will load the input. AlGaAs PIN diode switches
are an ideal choice for switching arrays in radar
systems, radiometers, test equipment and other multi-
assembly components.
Yellow areas indicate bond pads
Absolute Maximum Ratings @ TAMB = +25°C
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Assembly Temperature
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
± 25mA
+300°C < 10 sec
+175°C
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

MA4AGSW5 Datasheet Preview

MA4AGSW5 Datasheet

SP5T AlGaAs PIN Diode Switch

No Preview Available !

MA4AGSW5
SP5T AlGaAs PIN Diode Switch
V5
Electrical Specifications @ TA = 25°C, +/-10mA bias current
(On-wafer measurements)
RF PARAMETER
FREQUENCY
BAND
MAX
UNITS
PORT
BIAS
0.05 - 18 GHz
1.4
18 - 50 GHz
1.9
dB
dB
J2 to J1 -10 mA @ J2, +10 mA @ J3, J4, J5, J6
0.05 - 18 GHz
1.4
18 - 50 GHz
1.9
dB
dB
J3 to J1 -10 mA @ J3, +10 mA @ J2, J4, J5, J6
INSERTION LOSS
0.05 - 18 GHz
18 - 50 GHz
1.4
1.9
dB
dB
J4 to J1 -10 mA @ J4, +10 mA @ J2, J3, J5, J6
0.05 - 18 GHz
1.4
18 - 50 GHz
1.9
dB
dB
J5 to J1 -10 mA @ J5, +10 mA @ J2, J3, J4, J6
0.05 - 18 GHz
1.4
18 - 50 GHz
1.9
dB
dB
J6 to J1 -10 mA @ J6, +10 mA @ J2, J3, J4, J5
RF PARAMETER
FREQUENCY BAND
0.05 - 18 GHz
18 - 50 GHz
MIN
35.0
30.0
UNITS
dB
dB
PORT
J2 to J1
BIAS
-10 mA @ J6, +10 mA @ J3, J4, J5, J2
0.05 - 18 GHz
35.0
18 - 50 GHz
30.0
dB
dB
J3 to J1 -10 mA @ J6, +10 mA @ J2, J4, J5, J2
ISOLATION*
0.05 - 18 GHz
35.0
18 - 50 GHz
30.0
dB
dB
J4 to J1 -10 mA @ J6, +10 mA @ J2, J3, J5, J2
0.05 - 18 GHz
35.0
18 - 50 GHz
30.0
dB
dB
J5 to J1 -10 mA @ J6, +10 mA @ J2, J3, J4, J2
0.05 - 18 GHz
35.0
18 - 50 GHz
30.0
dB
dB
J6 to J1 -10 mA @ J2, +10 mA @ J2, J3, J4, J6
RF PARAMETER FREQUENCY BAND
MIN
UNITS
PORT
BIAS
0.05 - 18 GHz
12.0
18 - 50 GHz
12.0
dB
dB
J2 to J1 -10 mA @ J2, +10 mA @ J3, J4, J5, J6
0.05 - 18 GHz
12.0
18 - 50 GHz
12.0
dB
dB
J3 to J1 -10 mA @ J3, +10 mA @ J2, J4, J5, J6
INPUT/OUTPUT
0.05 - 18 GHz
12.0
RETURN LOSS
18 - 50 GHz
12.0
dB
dB
J4 to J1 -10 mA @ J4, +10 mA @ J2, J3, J5, J6
0.05 - 18 GHz
12.0
18 - 50 GHz
12.0
dB
dB
J5 to J1 -10 mA @ J5, +10 mA @ J2, J3, J4, J6
0.05 - 18 GHz
12.0
18 - 50 GHz
12.0
dB
dB
J6 to J1 -10 mA @ J6, +10 mA @ J2, J3, J4, J5
*Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series
junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction
diode port in low loss = 22 dB Typical.
Parameter
Switching Speed*
( 10-90 % RF Voltage )
F ( GHz )
10.0
RF Ports
Test Conditions
Typical
Value
J1 to J2,J3,J4,J5,J6 +/- 5V TTL Compatible PIN Diode Driver 15
Units
nS
*Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible
driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 Ω ohms to
achieve 15 ns rise and fall times.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number MA4AGSW5
Description SP5T AlGaAs PIN Diode Switch
Maker MA-COM
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MA4AGSW5 Datasheet PDF






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