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MASW-006102-13610 Datasheet Preview

MASW-006102-13610 Datasheet

Silicon PIN Diode Switch

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MASW-006102-13610
HMIC™ Silicon PIN Diode Switch
with Integrated Bias Network
Features
Broad Bandwidth 2 to 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Rugged, Glass Encapsulated Construction
Fully Monolithic
RoHS Compliant
Description
The MASW-006102-13610 is a SP6T broadband
switch with integrated bias network utilizing M/A-COM
Technology Solutions HMICTM (Heterolithic Microwave
Integrated Circuit) process, US Patent 5,268,310. This
wafer fabrication process allows the incorporation of
silicon pedestals that form series and shunt diodes
and vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
elements, plus the combination of silicon and glass
gives this HMIC device low loss and high isolation
performance with exceptional repeatability through low
millimeter frequencies. Large bond pads facilitate the
use of low inductance ribbons or 1 mil wire while full
backside gold metallization allows for die attachment
using 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or
electrically conductive silver epoxy.
Applications
The MASW-006102-13160 is a high performance
switch which is suitable for use in multi-band ECM,
radar, and instrumentation control circuits where high
isolation to insertion loss ratios are required. With a
standard +5V/-5V, TTL controlled PIN diode driver,
80nS switching speeds can be achieved.
V2
Yellow areas denote wire bond pads
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF Incident Power
Bias Current +25°C
Absolute Maximum
-65oC to +125oC
-65oC to +150oC
+175oC
50V
+33dBm C.W.1
±20mA
Note:
1. Maximum operating conditions for a
combination of RF power, D.C. bias and
operating temperature:
+33dBm CW @ 15mA (per diode) @+85°C
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is North America Tel: 800.366.2266 / Fax: 978.366.2266
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.




MA-COM

MASW-006102-13610 Datasheet Preview

MASW-006102-13610 Datasheet

Silicon PIN Diode Switch

No Preview Available !

MASW-006102-13610
HMIC™ Silicon PIN Diode Switch
with Integrated Bias Network
V2
MASW-006102-13610 (SP6T)
Electrical Specifications @ TAMB = +25oC, 10mA Bias current
PARAMETER
FREQUENCY BAND
MIN
TYP
MAX
UNITS
INSERTION
LOSS
ISOLATION
INPUT RETURN
LOSS
OUTPUT RETURN
LOSS
SWITCHING
SPEED
6 GHZ
12 GHz
18 GHz
6 GHZ
12 GHz
18 GHz
6 GHZ
12 GHz
18 GHz
6 GHZ
12 GHz
18 GHz
10 GHz
1.0 1.4 dB
1.3 2.0 dB
1.9 2.9 dB
43 49
dB
35 43
dB
30 39
dB
18 dB
20 dB
16 dB
19 dB
22 dB
20 dB
80 ns
Note:
1.Typical switching speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC
output spiking network, R = 50 – 200, C = 390 – 560pF.
Operation of the MASW-006102-13610
Operation of the MASW Series of PIN switches is achieved by the simultaneous application of negative DC
current to the low loss port and positive DC current to the remaining isolated switching ports per the Driver
Connections table below. The control currents should be supplied by constant current sources. For insertion
loss, -10mA bias results in approximately –2V, and for Isolation ,+10mA yields approximately +0.9V at the
respective bias nodes. The backside area of the die is the RF and DC return ground plane.
CONTROL LEVEL ( DC CURRENTD)river ConnectioCnOsNDITION OF RF OUTPUT
B2 B3 B4 B5 B6 B7 J2-J1 J3-J1 J4-J1 J5-J1 J6-J1
J7-J1
-10mA +10mA +10mA +10mA +10mA +10mA
Low
Loss
Isolation Isolation Isolation Isolation Isolation
+10mA -10mA +10mA +10mA +10mA +10mA Isolation
Low
Loss
Isolation Isolation Isolation Isolation
+10mA +10mA -10mA +10mA +10mA +10mA Isolation Isolation
Low
Loss
Isolation Isolation Isolation
+10mA +10mA +10mA -10mA +10mA +10mA Isolation Isolation Isolation
Low
Loss
Isolation Isolation
+10mA +10mA +10mA +10mA -10mA +10mA Isolation Isolation Isolation Isolation
Low
Loss
Isolation
+10mA +10mA +10mA +10mA +10mA -10mA Isolation Isolation Isolation Isolation Isolation
Low
Loss
2
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is North America Tel: 800.366.2266 / Fax: 978.366.2266
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.


Part Number MASW-006102-13610
Description Silicon PIN Diode Switch
Maker MA-COM
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