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MRF448A - The RF Line NPN Silicon Power Transistor

This page provides the datasheet information for the MRF448A, a member of the MRF448A-MA The RF Line NPN Silicon Power Transistor family.

Description

Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz.

Ideal for marine and base station equipment.

Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45% Intermodulation distortion @ 250 W (PEP) - I

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Datasheet Details

Part number MRF448A
Manufacturer MACOM
File Size 597.70 KB
Description The RF Line NPN Silicon Power Transistor
Datasheet download datasheet MRF448A Datasheet
Additional preview pages of the MRF448A datasheet.

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MRF448A The RF Line NPN Silicon Power Transistor 250 W, 30 MHz, 50 V Description Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.  Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45%  Intermodulation distortion @ 250 W (PEP) - IMD = -30 dB (max.)  100% tested for load mismatch at all phase angles with 3:1 VSWR Product Image Rev. V1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Withstand Current - 10 s Total Device Dissipation @ Tc =25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC - PD Tstg Value 50 100 4 16 20 290 1.
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