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PH2731-5M Datasheet Preview

PH2731-5M Datasheet

Radar Pulsed Power Transistor

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PH2731-5M
Radar Pulsed Power Transistor
5W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
TSTG
TJ
Rating
65
3.0
0.7
50
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 10mA
Collector-Emitter Leakage Current VCE = 40V
Thermal Resistance
Vcc = 36V, Pin = 1.0W
Output Power
Vcc = 36V, Pin = 1.0W
Power Gain
Vcc = 36V, Pin = 1.0W
Collector Efficiency
Vcc = 36V, Pin = 1.0W
Input Return Loss
Vcc = 36V, Pin = 1.0W
Load Mismatch Tolerance
Vcc = 36V, Pin = 1.0W
Load Mismatch Stability
Vcc = 36V, Pin = 1.0W
Frequency
F = 2.7, 2.9, 3.1 GHz
F = 2.7, 2.9, 3.1 GHz
F = 2.7, 2.9, 3.1 GHz
F = 2.7, 2.9, 3.1 GHz
F = 2.7, 2.9, 3.1 GHz
F = 2.7, 2.9, 3.1 GHz
F = 2.7, 2.9, 3.1 GHz
Symbol
BVCES
ICES
RTH(JC)
POUT
GP
C
RL
VSWR-T
VSWR-S
Min
65
-
-
5.0
7.0
30
-
-
-
Max Units
-V
1.0 mA
3.5 °C/W
-W
- dB
-%
-6 dB
3:1 -
1.5:1
-
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

PH2731-5M Datasheet Preview

PH2731-5M Datasheet

Radar Pulsed Power Transistor

No Preview Available !

PH2731-5M
Radar Pulsed Power Transistor
5W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty
Rev. V1
Typical RF Performance
Freq.
(GHz)
2.7
2.9
3.1
Pin
(W)
1.0
1.0
1.0
Pout
(W)
5.6
6.1
6.2
Gain
(dB)
7.47
7.83
7.89
Ic
(A)
0.48
0.50
0.51
Eff
(%)
32.6
33.5
33.8
RL
(dB)
-12.8
-16.7
-20.5
VSWR-S VSWR-T
(1.5:1)
(3:1)
SP
SP
SP
Gain vs. Frequency
8.6
8.2
7.8
7.4
7.0
2.7
2.8 2.9 3.0
Freq (GHz)
3.1
Collector Efficiency vs. Frequency
42
39
36
33
30
2.7
2.8 2.9 3.0
Freq (GHz)
3.1
RF Test Fixture Impedance
F (GHz)
2.7
2.9
3.1
ZIF (Ω)
40 - j12
35 - j16
30 - j18
ZOF (Ω)
25 + j3.5
16 + j2.4
12 + j4.0
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number PH2731-5M
Description Radar Pulsed Power Transistor
Maker MA-COM
Total Page 4 Pages
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