900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MA-COM

PH2856-160 Datasheet Preview

PH2856-160 Datasheet

Radar Pulsed Power Transistor

No Preview Available !

PH2856-160
Radar Pulsed Power Transistor
160W, 2.856 GHz, 12µs Pulse, 10% Duty
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
TSTG
TJ
Rating
65
3.0
15.0
700
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 40mA
Collector-Emitter Leakage Current VCE = 36V
Thermal Resistance
Vcc = 40V, Pout = 160W
Output Power
Vcc = 40V, Pout = 160W
Power Gain
Vcc = 40V, Pout = 160W
Collector Efficiency
Vcc = 40V, Pout = 160W
Input Return Loss
Vcc = 40V, Pout = 160W
Load Mismatch Tolerance
Vcc = 40V, Pout = 160W
Frequency
F = 2.856 GHz
F = 2.856 GHz
F = 2.856 GHz
F = 2.856 GHz
F = 2.856 GHz
F = 2.856 GHz
Symbol
BVCES
ICES
RTH(JC)
PiN
GP
C
RL
VSWR-T
Min
65
-
-
-
7.5
40
-
-
Max Units
-V
7.5 mA
0.25
28.5
°C/W
W
- dB
-%
-6 dB
3:1 -
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

PH2856-160 Datasheet Preview

PH2856-160 Datasheet

Radar Pulsed Power Transistor

No Preview Available !

PH2856-160
Radar Pulsed Power Transistor
160W, 2.856 GHz, 12µs Pulse, 10% Duty
Typical RF Performance
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff RL VSWR-T
(%) (dB) (3:1)
2.856
18.6
160
9.36 8.28
48.3 -16.1
P
Rev. V1
RF Test Fixture Impedance
F (GHz)
2.856
ZIF (Ω)
4.4 - j4.9
ZOF (Ω)
4.6 - j1.6
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number PH2856-160
Description Radar Pulsed Power Transistor
Maker MA-COM
Total Page 4 Pages
PDF Download

PH2856-160 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PH2856-160 Linear Accelerator Pulsed Power Transistor/ 16OW/ 12ms Pulse/ 10% Duty 2.856 GHz
Tyco Electronics
2 PH2856-160 Radar Pulsed Power Transistor
MA-COM





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy