XP1035-QH
XP1035-QH is Power Amplifier manufactured by MACOM Technology Solutions.
- Part of the XP1035-QH-MA comparator family.
- Part of the XP1035-QH-MA comparator family.
Features
- 26 d B Small Signal Gain
- 39 d Bm Third Order Intercept Point (OIP3)
- Integrated Power Detector
- Lead-Free 4 mm 24-lead QFN Package
- 100% RF Testing
- Ro HS- pliant and 260°C Reflow patible
Description
The XP1035-QH is a packaged linear power amplifier that operates over the 5.9-9.5 GHz frequency band. The device provides 26 d B gain and 39 d Bm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier is prised of a three stage power amplifier with an integrated, temperature pensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in Ga As PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1035-QH is specifically designed for Pt P radio applications and is well suited for other tele applications such as SAT and VSAT.
Ordering Information 1
Part Number XP1035-QH-0G00 XP1035-QH-0G0T
Package bulk quantity tape and reel
XP1035-QH-EV1 evaluation module
1. Reference Application Note M513 for reel size information.
Functional Schematic
GND GND GND VD1 VD2 VD3
Rev. V1
7 24 8 23 9 22 10 21 11 20 12 19
GND GND GND RF IN GND GND
1 2 3 4 5 6
18 GND 17 GND 16 GND 15 RFOUT 14 GND 13 GND
VG1 VG2 VG3 GND Vref Vdet
Pin Configuration 2
Pin No. Function Pin No. Function
1-3 Ground 12 Pwr Det
RF Input
13-14
Ground
5-6 Ground 15 RF Output
Gate 1 Bias
16-18
Ground
8 Gate 2 Bias 19 Drain 3 Bias
9 Gate 3 Bias 20 Drain 2 Bias
10 Ground 21 Drain 1 Bias
11 Pwr Det Ref. 22-24
Ground
2. The exposed pad centered on the package bottom must be connected to RF and DC...