CGH40045
CGH40045 is DC-4GHz RF Power GaN HEMT manufactured by MACOM Technology Solutions.
Description
The CGH40045 is an unmatched, gallium nitride (Ga N) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. Ga N HEMT soffer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and pressed amplifier circuits. The transistor is available in a flange and pill package.
Package Types: 440193 & 440206 PN’s: CGH40045F & CGH40045P
Features
- Up to 4 GHz Operation
- 16 d B Small Signal Gain at 2.0 GHz
- 12 d B Small Signal Gain at 4.0 GHz
- -
- 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation
Applications
- 2-Way Private Radio
- Broadband Amplifiers
- Cellular Infrastructure
- Test Instrumentation
- Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms
Large Signal Models Available for ADS and MWO
1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
Rev. 5.0, 2022-8-4 https://.ma./support
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-to-Source Voltage
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
IGMAX
Maximum Drain Current1
IDMAX
Soldering Temperature2
Screw...
