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CGH40045 - GaN HEMT

General Description

CAP, 6.8pF, ± -0.25 pF, 0603 CAP, 1.8pF, ± -0.1 pF, 0603 CAP, 5.6pF, ± -0.1pF, 0603 CAP, 10000pF, 100V, TEMP STBL, 0805 CAP, 0.1uF ±10%, 100 V, 1206, X7R CAP, 100pF±5%, 0603 CAP, 10UF, 16V, SMT, TANTALUM CAP, 0.2pF, ± -0.05pF, 0603 CAP, 1.0UF ±10%, 100V, 1210, X7R CAP, 33UF, 20%, 100V, ELECT, FK, SM

Key Features

  • Up to 4 GHz Operation >16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.0 GHz 55 W Typical P3dB 55 % Efficiency at P3dB 28 V Operation.

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Other Datasheets by Cree (now Wolfspeed)

Part Number Description
CGH40006P RF Power GaN HEMT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. www.DataSheet4U.com The transistor is available in a flange package. Package Type s: 440193 PN: CGH4004 5F FEATURES • • • • • • Up to 4 GHz Operation >16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.