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CGH40045 - DC-4GHz RF Power GaN HEMT

General Description

The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT).

The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 4 GHz Operation.
  • 16 dB Small Signal Gain at 2.0 GHz.
  • 12 dB Small Signal Gain at 4.0 GHz.
  • 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation.

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CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Description The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMT soffer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. Package Types: 440193 & 440206 PN’s: CGH40045F & CGH40045P Features • Up to 4 GHz Operation • 16 dB Small Signal Gain at 2.0 GHz • 12 dB Small Signal Gain at 4.