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CGH40045 - DC-4GHz RF Power GaN HEMT

Product Overview

MACOM

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CGH40045 DC-4GHz RF Power GaN HEMT by MACOM - Datasheet Preview — Datasheet preview – CGH40045

Datasheet Details

Part number	CGH40045
Manufacturer	MACOM
File Size	1.24 MB
Description	DC-4GHz RF Power GaN HEMT
Datasheet	CGH40045 Datasheet
Additional preview pages of the CGH40045 datasheet.

Product details

Description

The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT).

The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

Up to 4 GHz Operation.
16 dB Small Signal Gain at 2.0 GHz.
12 dB Small Signal Gain at 4.0 GHz.
55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation.

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Published: May 13, 2024 |