CGH40045 Description
The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMT soffer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and pressed amplifier circuits.
CGH40045 Key Features
- Up to 4 GHz Operation
- 16 dB Small Signal Gain at 2.0 GHz
- 12 dB Small Signal Gain at 4.0 GHz
- 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation
CGH40045 Applications
- Up to 4 GHz Operation