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CGH40045 Datasheet DC-4ghz Rf Power Gan Hemt

Manufacturer: MACOM Technology Solutions

Overview: CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT.

General Description

The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT).

The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMT soffer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits.

Key Features

  • Up to 4 GHz Operation.
  • 16 dB Small Signal Gain at 2.0 GHz.
  • 12 dB Small Signal Gain at 4.0 GHz.
  • 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation.

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