| Title | - HEMT For Use With CGHV1F025 |
| Description | The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while house... |
| Features |
• Up to 15 GHz Operation • 25 W Typical Output Power • 11 dB Gain at 9.4 GHz • Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for... |
| Datasheet |
 CGHV1F025S Datasheet - 1.29MB |
| Distributor |
DigiKey |
| Stock | 1 In stock |
| Price |
1 units: 1108041 KRW
|
| BuyNow |
 BuyNow - Manufacturer a MACOM CGHV1F025S-AMP1
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
1 units: 1108041 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 114.01 USD 10 units: 106.95 USD 25 units: 103.79 USD 50 units: 102.08 USD 100 units: 101.23 USD 250 units: 96.89 USD |
BuyNow |
|
 Verical |
1 units: 180.65 USD |
BuyNow |
|
 Richardson RFPD |
1 units: 180.62 USD |
BuyNow |
