CGHV1F025S Datasheet | MACOM Technology Solutions

Description The CGHV1F025S is an unmatched, gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V VDD, maintaining high gain and efficiency. Package Type: 3x4 DFN PN: CGHV1F025S Typical Performance 8.9 - 9.6 GHz (TC = 25ºC), 40 V Parameter Output Power @ PIN = 37 d Bm Drain Efficiency @ PIN = 37 d Bm Gain @ PIN = 0 d Bm 8.9 GHz 24 43.5 10.7 9.2 GHz 29 48.5 11.6 Note: Measured in the CGHV1F025S-AMP1 application circuit. Pulsed 100µs 10% duty 9.4 GHz 27 48 11.3 9.6 GHz 25 46 11.1 Units W % d B Features - Up to 15 GHz Operation - 25 W Typical Output Power - 11 d B Gain at 9.4 GHz - Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for ADS and MWO 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: Rev. 4.7, 2022-12-2 https://.ma./support Absolute Maximum Ratings (not simultaneous) at 25ºC Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Case Operating Temperature3,4 Thermal Resistance, Junction to Case5 Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS TC RθJC Rating 120 -10, +2 -65, +150 225 4.8 2 245 -40, +150 3.4 Units Conditions 25ºC ºC m A 25ºC A ºC ºC/W 85ºC Notes: 1 Current limit for long term, reliable operation 2 Refer to the...