CGHV1F025S Description
CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier.
CGHV1F025S Key Features
- Up to 15 GHz Operation
- 25 W Typical Output Power
- 11 dB Gain at 9.4 GHz
- Application circuit for 8.9
- 9.6 GHz