Datasheet4U Logo Datasheet4U.com

CGHV1F025S Datasheet Gan Hemt

Manufacturer: MACOM Technology Solutions

Overview: CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT.

General Description

The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.

The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications.

The datasheet specifications are based on a X-Band (8.9 9.6 GHz) amplifier.

Key Features

  • Up to 15 GHz Operation.
  • 25 W Typical Output Power.
  • 11 dB Gain at 9.4 GHz.

CGHV1F025S Distributor