Datasheet Details
| Part number | CGHV1F025S |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 1.29 MB |
| Description | GaN HEMT |
| Datasheet | CGHV1F025S-MACOM.pdf |
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Overview: CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT.
| Part number | CGHV1F025S |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 1.29 MB |
| Description | GaN HEMT |
| Datasheet | CGHV1F025S-MACOM.pdf |
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|
The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications.
The datasheet specifications are based on a X-Band (8.9 9.6 GHz) amplifier.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CGHV1F025S | GaN HEMT | Wolfspeed |
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CGHV1F025S | GaN HEMT | Cree |
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