CGHV1F025S Overview
Key Specifications
Description
The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications.
Key Features
- Up to 15 GHz Operation
- 25 W Typical Output Power
- 11 dB Gain at 9.4 GHz
