CGHV1F025S Datasheet and Specifications PDF

RES, 100, OHM, +1/-1%, 1/16 W, 0603 RES, 10, OHM, +1/-1%, 1/16 W, 0603 CAP, 1pF, ±0.1 pF, 0603, ATC CAP, 1.8pF, ±0.1 pF, 0603, ATC CAP, 0.6pF, ±0.1 pF, 0603, ATC CAP, 10 pF, ±5%, 0603, ATC CAP, 470 pF.

* Up to 15 GHz Operation
* 25 W Typical Output Power
* 11 dB Gain at 9.4 GHz
* Application circuit for 8.9 - 9.6 GHz Subject to change without notice. 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source V.

The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be d.

* Up to 15 GHz Operation
* 25 W Typical Output Power
* 11 dB Gain at 9.4 GHz
* Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contain.

Wolfspeed’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device .

* Up to 15 GHz Operation
* 25 W Typical Output Power
* 11 dB Gain at 9.4 GHz
* Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for ADS and MWO Rev. 4.7, 2022-12-2 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspee.