CGHV40100 Datasheet | MACOM Technology Solutions

Description The CGHV40100 is an unmatched, gallium nitride (Ga N) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. Ga N HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and pressed amplifier circuits. The transistor is available in a 2-lead flange and pill package. Features - Up to 3 GHz Operation - 100 W Typical Output Power - 17.5 d B Small Signal Gain at 2.0 GHz - Application Circuit for 0.5 - 2.5 GHz - 55% Efficiency at PSAT - 50 V Operation Package Types: 440193 & 440206 PN: CGHV40100F & CGHV40100P Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C), 50 V Parameter Small Signal Gain Saturated Output Power Drain Efficiency @ PSAT Input Return Loss 500 MHz 17.6 147 68 6 1.0 GHz 16.9 100 56 5.1 1.5 GHz 17.7 141 58 10.5 Notes: 1 Measured CW in the CGHV40100F-AMP application circuit. 2.0 GHz 17.5 116 54 5.5 2.5 GHz 14.8 112 54 8.8 Units d B W % d B Large Signal Models Available for ADS and MWO 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: Rev. 3.8, 2023-03-16 https://.ma./support Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque Thermal Resistance, Junction to Case3 Thermal Resistance, Junction to Case4 Case Operating Temperature5 Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering 3 Measured for the CGHV40100P at PDISS = 83 W 4 Measured for the CGHV40100F at PDISS = 83 W 5...