| Title | GaN FETs GaN HEMT 4.4-5.0GHz, 200 Watt |
| Description | The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode... |
| Features |
• 4.4 - 5.0 GHz Operation • 180 W Typical PSAT • 11.5 dB Typical Power Gain • 48% Typical Power Efficiency • 50 Ohm Internally Matched Applications • Troposcatter Communications • Beyond Line of Sight – BLOS • Satellite Communications Typical Performance Over 4.4-5.0 GHz (TC = 25˚C) of Demonstration Amplifier Parameter Small Signal Gain CW Outpu... |
| Datasheet |
 CGHV50200F Datasheet - 1.29MB |
| Distributor |
Mouser Electronics |
| Stock | 0 In stock |
| Price |
30 units: 1315.81 USD
|
| BuyNow |
 No Longer Stocked - Manufacturer a MACOM CGHV50200F
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
30 units: 1315.81 USD |
||
 Richardson RFPD |
1 units: 1799.96 USD |
BuyNow |
