CGHV50200F - GaN HEMT

MACOM

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Datasheet Details

Part number: CGHV50200F
Manufacturer: MACOM
File Size: 1.29 MB
Datasheet: CGHV50200F-MACOM.pdf
Description: GaN HEMT

CGHV50200F Product details

Description

The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight..

Features

4.4 - 5.0 GHz Operation.
180 W Typical PSAT.
11.5 dB Typical Power Gain.
48% Typical Power Efficiency.
50 Ohm Internally Matched.

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GaN HEMT MACOM

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CGHV50200F Stock/Price