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CGHV50200F - GaN HEMT

General Description

The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sigh

Key Features

  • 4.4 - 5.0 GHz Operation.
  • 180 W Typical PSAT.
  • 11.5 dB Typical Power Gain.
  • 48% Typical Power Efficiency.
  • 50 Ohm Internally Matched.

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Full PDF Text Transcription (Reference)

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CGHV50200F 200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT Description The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: CGHV50200F Package Type: 440217 Features • 4.4 - 5.0 GHz Operation • 180 W Typical PSAT • 11.