CGHV50200F - GaN HEMT

Datasheet Summary

Features

4.4 - 5.0 GHz Operation.
180 W Typical PSAT.
11.5 dB Typical Power Gain.
48% Typical Power Efficiency.
50 Ohm Internally Matched.

Cree

📥 Download Datasheet

Datasheet Details

Part number	CGHV50200F
Manufacturer	Cree
File Size	1.01 MB
Description	GaN HEMT
Datasheet	CGHV50200F Datasheet
Additional preview pages of the CGHV50200F datasheet.

📁 Similar Datasheet

CGHV50200F - GaN HEMT (Wolfspeed)
CGHV50200F - GaN HEMT (MACOM)
CGHV59070 - RF Power GaN HEMT (Wolfspeed)
CGHV59350 - GaN HEMT (Wolfspeed)
CGHV14250 - GaN HEMT (Wolfspeed)
CGHV14500F - GaN HEMT (MACOM)
CGHV14800 - GaN HEMT (Wolfspeed)
CGHV14800F1 - 800W GaN Transistor (Wolfspeed)
CGHV1F006S - GaN HEMT (Wolfspeed)
CGHV1F025S - GaN HEMT (MACOM)

Other Datasheets by Cree

CGHV59070 - RF Power GaN HEMT
CGHV59350 - GaN HEMT
CGHV14250 - GaN HEMT
CGHV14500 - GaN HEMT
CGHV14800 - GaN HEMT
CGHV14800F - GaN HEMT
CGHV1F006S - GaN HEMT
CGHV1F025S - GaN HEMT

Full PDF Text Transcription

Click to expand full text

CGHV50200F 200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: Package TCyGpHeV: 45400220107F Typical Performance Over 4.4-5.0 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 4.4 GHz 4.6 GHz 4.8 GHz Small Signal Gain 14.9 14.9 14.

Published: Jun 22, 2020 |