CGHV50200F Overview
CGHV50200F 200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter munications, 4.4 - 5.0 GHz C-Band Sat applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of...
CGHV50200F Key Features
- 5.0 GHz Operation
- 180 W Typical PSAT
- 11.5 dB Typical Power Gain
- 48% Typical Power Efficiency
- 50 Ohm Internally Matched
