Overview: CGHV50200F
200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT
Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter munications, 4.4 - 5.0 GHz C-Band Sat applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: Package TCyGpHeV: 45400220107F Typical Performance Over 4.4-5.0 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 4.4 GHz 4.6 GHz 4.8 GHz Small Signal Gain 14.9 14.9 14.9 CW Output Power1 173 177 170 Output Power2 100 100 126 Power Gain2 11.4 11.6 11.0 Power Added Efficiency2 49 47 48 5.0 GHz 15.1 166 101 11.8 48 1Note: Measured CW in the CGHV50200F-AMP at PIN = 43 dBm 2Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV50200F-AMP under OQPSK modulation, 1.6 Msps, PN23,
Alpha Filter = 0.2.
