Datasheet Details
| Part number | CGHV50200F |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 1.29 MB |
| Description | GaN HEMT |
| Datasheet | CGHV50200F-MACOM.pdf |
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Overview: CGHV50200F 200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN.
| Part number | CGHV50200F |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 1.29 MB |
| Description | GaN HEMT |
| Datasheet | CGHV50200F-MACOM.pdf |
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|
|
The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter munications, 4.4 - 5.0 GHz C-Band Sat applications and Beyond Line of Sight.
The GaN HEMT is matched to 50 ohm, for ease of use.
It is designed for CW, pulse, and linear mode of power amplifier operation.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CGHV50200F | GaN HEMT | Cree |
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CGHV50200F | GaN HEMT | Wolfspeed |
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