CGHV50200F Overview
The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter munications, 4.4 - 5.0 GHz C-Band Sat applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power amplifier...
CGHV50200F Key Features
- 5.0 GHz Operation
- 180 W Typical PSAT
- 11.5 dB Typical Power Gain
- 48% Typical Power Efficiency
- 50 Ohm Internally Matched
