CGHV96050F2
CGHV96050F2 is GaN HEMT manufactured by MACOM Technology Solutions.
Description
The CGHV96050F2 is a gallium nitride (Ga N) amplifier. This Ga N amplifier offers excellent power added efficiency in parison to other technologies. Ga N has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. Ga N HEMTs also offer greater power density and wider bandwidths pared to Ga As transistors. This amplifier is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
PN: CGHV96050F2 Package Type: 440217
Typical Performance Over 8.4
- 9.6 GHz (TC = 25ºC)
Parameter Linear Gain Output Power Power Gain Power Added Efficiency
8.4 GHz 13.8 85 10.4 57
8.8 GHz 12.8 77 9.9 54
9.0 GHz 12.3 81 10.1 52
9.2 GHz 12.3 82 10.1 54
9.4 GHz 12.2 75 8.8 48
Note: Measured in CGHV96050F2-AMP (838179) under 100µs pulse width, 10% duty, PIN 39.0 d Bm (7.9 W)
9.6 GHz 11.8 75 9.8 45
Units d B W d B %
Features
- 8.4
- 9.6 GHz Operation
- 80 W POUT typical
- 10 d B Power Gain
- 55% Typical PAE
- 50 Ohm Internally Matched
- <0.1 d B Power Droop
Applications
- Marine Radar
- Weather Monitoring
- Air Traffic Control
- Maritime Vessel Traffic Control
- Port Security
Large Signal Models Available for ADS and MWO
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Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Drain-source Voltage
VDSS
Gate-source...
