| Title | GaN HEMT For Use With CGHV96050F2 |
| Description | The CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal ... |
| Features |
• 8.4 - 9.6 GHz Operation • 80 W POUT typical • 10 dB Power Gain • 55% Typical PAE • 50 Ohm Internally Matched • <0.1 dB Power Droop Applications • Marine Radar • Weather Monitoring • Air Traffic Control • Maritime Vessel Traffic Control • Port Security Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and i... |
| Datasheet |
 CGHV96050F2 Datasheet - 807.41KB |
| Distributor |
DigiKey |
| Stock | 2 In stock |
| Price |
1 units: 1662487 KRW
|
| BuyNow |
 BuyNow - Manufacturer a MACOM CGHV96050F2-AMP
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
1 units: 1662487 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 669.32 USD 10 units: 644.14 USD |
||
 Verical |
2 units: 666.7 USD |
BuyNow |
|
 Richardson RFPD |
1 units: 932.18 USD |
BuyNow |
