CGHV96050F2 Overview
Key Specifications
Description
Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
Key Features
- 8.4 - 9.6 GHz Operation
- 80 W POUT typical
- 10 dB Power Gain
- 55% Typical PAE
- 50 Ohm Internally Matched
