CGHV96050F2 Overview
Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in parison to other technologies. GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
CGHV96050F2 Key Features
- 9.6 GHz Operation
- 80 W POUT typical
- 10 dB Power Gain
- 55% Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
