CGHV96050F2 Datasheet and Specifications PDF

Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added effic.

* 8.4 - 9.6 GHz Operation
* 80 W POUT typical
* 10 dB Power Gain
* 55% Typical PAE
* 50 Ohm Internally Matched
* <0.1 dB Power Droop Applications
* Marine Radar
* Weather Monitoring
* Air Traffic Control
* Maritime Vessel Traffic Control
* Port Security Large Signal Models Available for ADS and MW.

The CGHV96050F2 is a gallium nitride (GaN) amplifier. This GaN amplifier offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or.

* 8.4 - 9.6 GHz Operation
* 80 W POUT typical
* 10 dB Power Gain
* 55% Typical PAE
* 50 Ohm Internally Matched
* <0.1 dB Power Droop Applications
* Marine Radar
* Weather Monitoring
* Air Traffic Control
* Maritime Vessel Traffic Control
* Port Security Large Signal Models Available for ADS and MW.