CMPA1C1D060D Datasheet | MACOM Technology Solutions

Description The CMPA1C1D060D is a gallium nitride (Ga N) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. Ga N-on-Si C has superior properties pared to silicon, gallium arsenide or Ga N-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. Ga N HEMTs also offer greater power density and wider bandwidths pared to Si, Ga As, and Ga N-on-Si transistors. Typical Performance Over 12.7-13.25 GHz (TC = 25ºC) Parameter 12.7 GHz 13.0 GHz Small Signal Gain PSAT @ PIN = 28 d Bm PAE @ PIN = 28 d Bm Note: All data in this table is based on fixtured, CW performance PN: CMPA1C1D060D 13.25 GHz 26 60 27 Units d B W % Features - 26 d B Small Signal Gain - 60 W Typical PSAT - Operation up to 40 V - High Breakdown Voltage - High Temperature Operation - Size 0.209 x 0.240 x 0.004 inches Applications - Satellite munications Uplink - PTP Radio 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: Rev. 1.0, 2022-8-30 https://.ma./support Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Drain-Source Voltage Gate-to-Source...