Datasheet Details
| Part number | CMPA1C1D060D |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 381.99 KB |
| Description | Power Amplifier |
| Datasheet | CMPA1C1D060D-MACOM.pdf |
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Overview: CMPA1C1D060D 60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier.
| Part number | CMPA1C1D060D |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 381.99 KB |
| Description | Power Amplifier |
| Datasheet | CMPA1C1D060D-MACOM.pdf |
|
|
|
The CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process.
GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.
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