CMPA0060025D Overview
The CMPA0060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si and GaAs transistors.
CMPA0060025D Key Features
- 18 dB Small Signal Gain
- 30 W Typical PSAT
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation
- Size 0.157 x 0.094 x 0.004 inches
