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CMPA0060025D - Power Amplifier

General Description

The CMPA0060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Key Features

  • 18 dB Small Signal Gain.
  • 30 W Typical PSAT.
  • Operation up to 50 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • Size 0.157 x 0.094 x 0.004 inches.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Description The CMPA0060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths. PN: CMPA0060025D Typical Performance Over 1.0-6.0 GHz (TC = 25ºC) Parameter Gain Output Power @ PIN 32 dBm Associated Gain @ PIN 32 dBm PAE @ PIN 32 dBm 1.0 GHz 18.0 34 13.3 54 2.0 GHz 18.0 38 13.9 45 3.0 GHz 18.5 42 14.2 46 Note: VDD = 50 V, ID = 500 mA 4.