CMPA0060025D Datasheet | MACOM Technology Solutions

25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Description The CMPA0060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si and GaAs transistors. This MMIC enables very wide bandwidths. PN: CMPA0060025D Typical Performance Over 1.0-6.0 GHz (TC = 25ºC) Parameter Gain Output Power @ PIN 32 dBm Associated Gain @ PIN 32 dBm PAE @ PIN 32 dBm 1.0 GHz...