CMPA5259025F Datasheet | MACOM Technology Solutions

Description The CMPA5259025F is a gallium-nitride (Ga N) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Types: 440219 PN's: CMPA5259025F Features - 30 d B small signal gain - - 50% efficiency at PSAT Operation up to 28 V - High breakdown voltage Applications - Radar Typical Performance Over 5.2 - 5.9 GHz (TC = 25 °C) of Demonstration Amplifier Parameter Small Signal Gain Output Power1 Efficiency1 5.2 GHz 33.6 38.5 53.5 5.5 GHz 31.9 39.6 51.3 5.9 GHz 32.2 34.8 47.2 Input Return Loss -13.5 -15.5 -4.8 Note: 1 100 μsec pulse width, 10% duty cycle, PIN = 22 d Bm. Units d B W % d B 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: Rev. 2.2, OCTOBER 2023 https://.ma./support Absolute Maximum Ratings (Not Simultaneous) at 25 °C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage Gate-Source Voltage Storage Temperature Operating Junction Temperature Soldering Temperature Screw Torque VDSS -10, +2 TSTG -55,...