CMPA5259025F - GaN MMIC

Product Overview

MACOM

Datasheet Details

Part number	CMPA5259025F
Manufacturer	MACOM
File Size	809.65 KB
Description	GaN MMIC
Datasheet	CMPA5259025F Datasheet
Additional preview pages of the CMPA5259025F datasheet.

Product details

Description

The CMPA5259025F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz radar amplifier applications.

Features

30 dB small signal gain.
50% efficiency at PSAT Operation up to 28 V.
High breakdown voltage.

📁 Similar Datasheet

CMPA5259025S - Power Amplifier (Wolfspeed)
CMPA5259050F - GaN MMIC (CREE)
CMPA5259050S - Power Amplifier (Wolfspeed)
CMPA5585030F - Power Amplifier (CREE)
CMPA0060002D - GaN HEMT MMIC Power Amplifier (Wolfspeed)
CMPA0060002F - GaN MMIC Power Amplifier (CREE)
CMPA0060025F - GaN MMIC Power Amplifier (CREE)
CMPA0527005F - GaN HEMT (CREE)

Other Datasheets by MACOM

CMPA5259080S - Power Amplifier
CMPA0060025D - Power Amplifier
CMPA0530002S - GaN MMIC
CMPA0560008S - 10W GaN HPA
CMPA1C1D060D - Power Amplifier
CMPA1D1J001S - 1W GaN HPA

Published: May 13, 2024 |