CMPA901A035F1 Description
The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The device provides 35 watts of output power across the band from 9 to 11 GHz. The GaN HEMT MMIC is fully matched to 50 Ohm, is housed in a pact, 6-lead metal/ceramic flanged package (Type:.
CMPA901A035F1 Key Features
- 35 W typical PSAT >38% typical power added efficiency
- 35 dB large signal gain
- High temperature operation