CMPA901A035F1
Description
The CMPA901A035F1 is a gallium nitride (Ga N) monolithic microwave integrated circuit (MMIC) on a silicon carbide (Si C) substrate. The device provides 35 watts of output power across the band from 9 to 11 GHz. The Ga N HEMT MMIC is fully matched to 50 Ohm, is housed in a pact, 6-lead metal/ceramic flanged package (Type: 440219), and offers high power, high gain, and superior efficiency. The CMPA901A035F1 is suitable for long pulse operation and capable of CW operation.
Features
- -
35 W typical PSAT >38% typical power added efficiency
- 35 d B large signal gain
- High temperature operation
Note: Features are typical performance across frequency under 25 °C operation. Please reference performance charts for additional details.
Applications
- Civil and military pulsed radar amplifiers
Package Type: 440219 PN's: CMPA901A035F1
Typical Performance Over 9.0
- 10.0 GHz (TC = 25 °C)
Parameter Small Signal Gain1,2 Output Power1,3 Power Gain1,3 Power Added Efficiency1,3
Notes:...
