CMPA901A035F Key Features
- 35 W typical PSAT
- >33% typical power added efficiency
- 22.5 dB large signal gain
- High temperature operation
- Part: CMPA901A035F
- Manufacturer: MACOM Technology Solutions
- Size: 1.84 MB
Other CMPA901A035F Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Wolfspeed |
CMPA901A035F | Power Amplifier |
CMPA901A035F Description
The CMPA901A035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package.