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CMPA901A035F - Power Amplifier

Datasheet Summary

Description

The CMPA901A035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate.

The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth.

Features

  • 35 W typical PSAT.
  • >33% typical power added efficiency.
  • 22.5 dB large signal gain.
  • High temperature operation.

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Datasheet Details

Part number CMPA901A035F
Manufacturer MACOM
File Size 1.84 MB
Description Power Amplifier
Datasheet download datasheet CMPA901A035F Datasheet
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CMPA901A035F 35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier Description The CMPA901A035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms. Package Types: 440213 PN’s: CMPA901A035F Features • 35 W typical PSAT • >33% typical power added efficiency • 22.
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