CMPA901A035F
Description
The CMPA901A035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate.
Key Features
- 35 W typical PSAT
- >33% typical power added efficiency
- 22.5 dB large signal gain
- High temperature operation
