Datasheet Details
| Part number | CMPA901A035F |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 1.84 MB |
| Description | Power Amplifier |
| Datasheet |
 CMPA901A035F Datasheet
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General Description
The CMPA901A035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate.
The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth.
Key Features
- 35 W typical PSAT.
- >33% typical power added efficiency.
- 22.5 dB large signal gain.
- High temperature operation.
