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CMPA901A035F1 - Power Amplifier

General Description

The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate.

The device provides 35 watts of output power across the band from 9 to 11 GHz.

Key Features

  • 35 W typical PSAT >38% typical power added efficiency.
  • 35 dB large signal gain.
  • High temperature operation Note: Features are typical performance across frequency under 25 °C operation. Please reference performance charts for additional details.

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Full PDF Text Transcription for CMPA901A035F1 (Reference)

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CMPA901A035F1 35 W, 9.0 - 10 GHz, GaN MMIC, Power Amplifier Description The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) on a s...

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um nitride (GaN) monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The device provides 35 watts of output power across the band from 9 to 11 GHz. The GaN HEMT MMIC is fully matched to 50 Ohm, is housed in a compact, 6-lead metal/ceramic flanged package (Type: 440219), and offers high power, high gain, and superior efficiency. The CMPA901A035F1 is suitable for long pulse operation and capable of CW operation. Features • • 35 W typical PSAT >38% typical power added efficiency • 35 dB large signal gain • High temperature operation Note: Features are typical performance across frequency under

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