GTVA212701FA Datasheet | MACOM Technology Solutions

Description The GTVA212701FA is a 270-watt Ga N on Si C high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. Package Types: H-87265J-2 Peak/Average Ratio (d B), Gain (d B) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 m A, ƒ = 2170 MHz 3GPP WCDMA signal, 10 d B PAR, 3.84 MHz bandwidth Gain Efficiency -20 0 25 PAR @ 0.01% CCDF -40 g212701fa-gr1 -60 30 35 40 45 50 55 Average Output Power (d Bm) Features - Ga N on Si C HEMT technology - Input matched - Typical pulsed CW performance (class AB), 2180 MHz, 48 V, 10 µs pulse width, 10% duty cycle - Output power P3d B = 300 W - Drain efficiency = 68.5% - Gain = 17.5 d B - Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001) - Capable of handling 10:1 VSWR @ 48 V, 56.2 W (WCDMA) output power - Low thermal resistance - Pb-free and Ro HS-pliant RF Characteristics Single-carrier WCDMA Specifications (tested in the test fixture) VDD = 48 V, IDQ = 320 m A, 56.2 W average output power, ƒ = 2180 MHz. 3GPP WCDMA signal: 3.84 MHz channel bandwidth, 10 d B PAR at 0.01% CCDF. Characteristic Gain Drain Efficiency Adjacent Channel Power Ratio Output PAR @ 0.01%...