GTVA126001EC - 600W High Power RF GaN HEMT

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MACOM

Part number	GTVA126001EC
Manufacturer	MACOM
File Size	430.25 KB
Description	600W High Power RF GaN HEMT
Datasheet	GTVA126001EC Datasheet
Additional preview pages of the GTVA126001EC datasheet.

The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.

GaN on SiC HEMT technology.
Input matched.
Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle.
Output power P3dB = 600 W.
Drain efficiency = 65%.
Gain = 18 dB.
Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001).

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Published: May 9, 2024 |