GTVA126001EC Description
The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.
GTVA126001EC Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance (class AB), 1200 MHz, 50 V
- Output power P3dB = 600 W
- Drain efficiency = 65%
- Gain = 18 dB
- Capable of withstanding a 10:1 load mismatch (all phase
- Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS pliant
- Unit dB %