Datasheet Details
| Part number | GTVA126001EC |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 430.25 KB |
| Description | 600W High Power RF GaN HEMT |
| Datasheet |
 GTVA126001EC Datasheet
|
|
|
General Description
The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.
They feature input matching, high efficiency, and thermally-enhanced packages.
Key Features
- GaN on SiC HEMT technology.
- Input matched.
- Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle.
- Output power P3dB = 600 W.
- Drain efficiency = 65%.
- Gain = 18 dB.
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
- Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001).