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GTVA126001EC - 600W High Power RF GaN HEMT

Description

The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.

They feature input matching, high efficiency, and thermally-enhanced packages.

Features

  • GaN on SiC HEMT technology.
  • Input matched.
  • Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle.
  • Output power P3dB = 600 W.
  • Drain efficiency = 65%.
  • Gain = 18 dB.
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
  • Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001).

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Datasheet preview – GTVA126001EC

Datasheet Details

Part number GTVA126001EC
Manufacturer MACOM
File Size 430.25 KB
Description 600W High Power RF GaN HEMT
Datasheet download datasheet GTVA126001EC Datasheet
Additional preview pages of the GTVA126001EC datasheet.

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GGaiainn((ddBB)) EffEiffciicieennccyy((%%)) GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages.
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