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GTVA126001FC - Thermally-Enhanced High Power RF GaN HEMT

This page provides the datasheet information for the GTVA126001FC, a member of the GTVA126001EC Thermally-Enhanced High Power RF GaN HEMT family.

Description

The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

They feature input matching, high efficiency, and thermallyenhanced packages.

Features

  • GaN on SiC HEMT technology.
  • Input matched.
  • Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power (P3dB) = 600 W - Drain efficiency = 65% - Gain = 18 dB.
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 µs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
  • Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001).
  • Pb-free and.

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Datasheet preview – GTVA126001FC

Datasheet Details

Part number GTVA126001FC
Manufacturer Wolfspeed
File Size 436.96 KB
Description Thermally-Enhanced High Power RF GaN HEMT
Datasheet download datasheet GTVA126001FC Datasheet
Additional preview pages of the GTVA126001FC datasheet.

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Full PDF Text Transcription

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GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. They feature input matching, high efficiency, and thermallyenhanced packages.
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