GTVA126001FC Datasheet | Wolfspeed

Description The GTVA126001EC and GTVA126001FC are 600-watt Ga N on Si C high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. They feature input matching, high efficiency, and thermallyenhanced packages. GTVA126001EC Package H-36248-2 GTVA126001FC Package H-37248-2 Gain (d B) Efficiency (%) Power Sweep: Gain & Efficiency 50 V, IDQ = 100 m A, 300 µs pulse width, 10% duty cycle 15 0 1200 MHz 1300 MHz 1400 MHz 400 500 600 30 g126001efc-gr1 700 800 Output Power (W) Features - Ga N on Si C HEMT technology - Input matched - Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power (P3d B) = 600 W - Drain efficiency = 65% - Gain = 18 d B - Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 µs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 m A - Human Body Model Class 1C (per An SI/ESDA/JEDEC JS-001) - Pb-free and Ro HS pliant RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 100 m A, POUT = 600 W, ƒ = 1400 MHz, 300 µs pulse width, 10% duty cycle Characteristic...