Datasheet Details
| Part number | GTVA126001EC |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 436.96 KB |
| Description | Thermally-Enhanced High Power RF GaN HEMT |
| Datasheet |
 GTVA126001EC Datasheet
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General Description
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.
They feature input matching, high efficiency, and thermallyenhanced packages.
Key Features
- GaN on SiC HEMT technology.
- Input matched.
- Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power (P3dB) = 600 W - Drain efficiency = 65% - Gain = 18 dB.
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 µs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
- Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001).
- Pb-free and.