GTVA126001EC
GTVA126001EC is Thermally-Enhanced High Power RF GaN HEMT manufactured by Wolfspeed.
Description
The GTVA126001EC and GTVA126001FC are 600-watt Ga N on Si C high electron mobility transistors (HEMT) for use in the DC
- 1.4 GHz frequecy band. They feature input matching, high efficiency, and thermallyenhanced packages.
GTVA126001EC Package H-36248-2
GTVA126001FC Package H-37248-2
Gain (d B) Efficiency (%)
Power Sweep: Gain & Efficiency 50 V, IDQ = 100 m A,
300 µs pulse width, 10% duty cycle
15 0
1200 MHz 1300 MHz 1400 MHz
400 500 600
30 g126001efc-gr1
700 800
Output Power (W)
Features
- Ga N on Si C HEMT technology
- Input matched
- Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle
- Output power (P3d B) = 600 W
- Drain efficiency = 65%
- Gain = 18 d B
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 µs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 m A
- Human Body Model Class 1C (per An SI/ESDA/JEDEC JS-001)
- Pb-free and Ro HS pliant
RF Characteristics
Pulsed RF Performance (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 100 m A, POUT = 600 W, ƒ = 1400 MHz, 300 µs pulse width, 10% duty cycle
Characteristic...
