| Title | |
| Description | The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 1930 - 2020 MHz and a thermally-enhanced over-molded plastic package. Typical RF Performance1 (Tested in Doherty application test circuit) VDD = 48 V, IDQ = 360 mA, POUT = 49.3 dBm (85 W), TA = +25°C, Channel Bandwidth =... |
| Features |
• GaN on SiC HEMT Technology • Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, Combined Outputs • Output Power @ P4dB = 630 W • Efficiency @ P4dB = 74% • RoHS* Compliant Applications • Cellular Power Description The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular ... |
| Datasheet |
 WGC20630V1A Datasheet - 858.73KB |
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