WGC20630V1A Datasheet | MACOM Technology Solutions

Features - Ga N on Si C HEMT Technology - Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, bined Outputs - Output Power @ P4d B = 630 W - Efficiency @ P4d B = 74% - Ro HS- pliant Applications - Cellular Power Description The WGC20630 is a 630 W (P4d B) Ga N on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 1930 - 2020 MHz and a thermally-enhanced over-molded plastic package. Typical RF Performance1 (Tested in Doherty application test circuit) VDD = 48 V, IDQ = 360 m A, POUT = 49.3 d Bm (85 W), TA = +25°C, Channel Bandwidth = 3.84 MHz, Peak/Average = 10 d B @ 0.01% CCDF Frequency (MHz) Gain Efficiency OPAR (d B) (%) (d B) ACPR (d Bc) -30.6 -30.9 -32.1 1. Measurements taken with the device soldered in an application test circuit. Ordering Information WGC20630V1A-R0 WGC20630V1A-R2 LTAWGC20630-E4 50 piece reel 250 piece reel Sample...