Click to expand full text
Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz
Features
• GaN on SiC HEMT Technology • Pulsed CW Performance: 2155 MHz, 48 V, 40 µs
Pulse Width, 10% Duty Cycle, Combined Outputs • Output Power @ P4dB = 630 W • Efficiency @ P4dB = 68% • RoHS* Compliant
Applications
• Cellular Power
Description
The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 2110 - 2200 MHz and a thermally-enhanced over-molded plastic package.
Typical RF Performance1
WCDMA 3GPP TM1 64 DPCH 10dB PAR @ 0.01% CCDF, VDS = 48 V, IDQCAR = 360 mA, VGSPK = -4.7 V, POUT = 49.3 dBm (85 W), TA = +25°C.
Frequency (MHz)
Gain Efficiency OPAR
(dB)
(%)
(dB)
ACPR (dBc)
2110
16.5
58.0
8.
WGC22630 Datasheet
