WGC22630 Description
The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications.
WGC22630 Key Features
- GaN on SiC HEMT Technology
- Pulsed CW Performance: 2155 MHz, 48 V, 40 µs
- Output Power @ P4dB = 630 W
- Efficiency @ P4dB = 68%
- RoHS- pliant