WGC22630 Datasheet | MACOM Technology Solutions

Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz Features - GaN on SiC HEMT Technology - Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pulse Width, 10% Duty Cycle, bined Outputs - Output Power @ P4dB = 630 W - Efficiency @ P4dB = 68% - RoHS- pliant Applications - Cellular Power Description The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It Features optimized operation from 2110 - 2200 MHz and a thermally-enhanced over-molded plastic package. Typical RF Performance1 WCDMA 3GPP TM1 64 DPCH 10dB PAR @ 0.01% CCDF, VDS = 48 V, IDQCAR = 360 mA, VGSPK = -4.7 V, POUT = 49.3 dBm (85 W),...