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MCC
MCC

2SC2336 Datasheet Preview

2SC2336 Datasheet

NPN Silicon Power Transistors

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2SC2336 pdf
MCC
  omponents
21201 Itasca Street Chatsworth

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2SC2336
Features
With TO-220 package
Power amplifier applications
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
180
180
5.0
1.5
25
-55 to +150
-55 to +150
Unit
V
V
V
A
W
OC
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0)
ICBO Collector-Base Cutoff Current
(VCB=150Vdc,IE=0)
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
180
---
---
--- Vdc
1.0 uAdc
1.0 uAdc
hFE Forward Current Transfer ratio
60 320 ---
(IC=0.15Adc, VCE=5.0Vdc)
VCE(sat) Collector-Emitter Saturation Voltage
--- 1.0 Vdc
(IC=0.5Adc, IB=0.05Adc)
VBE(sat) Base-Emitter Saturation Voltage
--- 1.5 Vdc
(IC=0.5Adc,IB=0.05Adc)
NPN Silicon
Power Transistors
TO-220
B
C
K
PIN
L
D
E
F
M
A
I
HH
G
J
N


INCHES
MM
 
  
A
.560
.625
14.22 15.88
B
.380
.420
9.65
10.67
C
.100
.135
2.54
3.43
D
.230
.270
5.84
6.86
E
.380
.420
9.65
10.67
F
------
.250
------
6.35
G
.500
.580
12.70
14.73
H
.090
.110
2.29
2.79
I
.020
.045
0.51
1.14
J
.012
.025
0.30
0.64
K
.139
.161
3.53
4.09
L
.140
.190
3.56
4.83
M
.045
.055
1.14
1.40
N
.080
.115
2.03
2.92
 
www.mccsemi.com


Part Number 2SC2336
Description NPN Silicon Power Transistors
Maker MCC
Total Page 1 Pages
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