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2SC2336 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1006 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2336 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)★ Collector-Emitter Saturation Voltage IC= 500mA;

IB= 50mA VBE(sat)★ Base-Emitter Saturation Voltage IC= 500mA;

IB= 50mA ICBO Collector Cutoff Current VCB= 150V;