2SC2336 Overview
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)★ Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat)★ Base-Emitter Saturation Voltage IC= 500mA;.
