FEATURES
● With TO-220 package
● Power amplifier applications MAXIMUM RATINGS
Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 180 180 5.0 1.5 25 -55 to +150 -55 to +150 Unit V V V A W OC OC ELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage (IC=50mAdc, IB=0) ICBO Collector-Base Cutoff Current (VCB=150Vdc,IE=0) IEBO Emitter-Base Cutoff Current (VEB=5.0Vdc, IC=0) ON CHARACTERISTICS 180 ----- --- Vdc 1.0 uAdc 1.0 uAdc hFE Forward Current Transfer ratio 60 320 --- (IC=0.15Adc, VCE=5.0Vdc) VCE(sat) Collector-Emitter Saturation Voltage --- 1.0 Vdc (IC=0.5Adc, IB=0.05Adc) VBE(sat) Base-Emitter Saturation Voltage --- 1.5 Vdc (IC=0.5Adc,IB=0.05Adc) NPN Silicon Power Transistors TO-220 B C K PIN L D E F M A I HH G J N INCHES MM A .560...
Micro Commercial Components