SavantIC 2SC2335
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-220C package●Collector-emitter sustaining voltage VCEO(sus)=400V(Min)
●Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
●Switching time-tf=1.0µs(Max.)@IC=3.0A
APPLICATIONS
●Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as switching regulator’s ,inverters,,DC-DC and converter PINNING PIN 1 2 3 Base Collector;connected to mounting base EmitterDESCRIPTION
Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 3.5 40 150 -50~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.125 UNIT /W Sav...