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2SC2335 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A, IB= 0.6A Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A, IB= 0.6A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching in Inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters,DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 7.