2SC2337 - NPN Transistor

Inchange Semiconductor

General Description

High Current Capability Collector-Emitter Breakdown Voltage- : V(BR)CEO= 130V(Min.) Complement to Type 2SA1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

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2SC2337 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC2337
Manufacturer	Inchange Semiconductor
File Size	185.57 KB
Description	NPN Transistor
Datasheet	2SC2337 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 130V(Min.) ·Complement to Type 2SA1007 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 130 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC2337 isc website：www.iscsemi.