Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±20V
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
IDSS
VDS=60V, VGS=0V, TJ=85°C
Gate-Threshold Voltage(Note 2)
VGS(th) VDS=VGS, ID=250µA
Drain-Source On-Resistance(Note 2)
RDS(on)
VGS=10V, ID=40A
VGS=4.5V, ID=20A
Diode Forward Voltage
VSD VGS=0V, IS=40A
Dynamic Characteristics(Note 3)
Input Capacitance
Ciss
Output Capacitance
Coss VDS=50V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDD=50V,VGS=10V,ID=40A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD =50V, ID=40A,RL=1.1Ω,
RG=4.7Ω
Turn-Off Fall Time
tf
Note 2. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 1%.
3. Guaranteed by Design, Not Subject to Production Testing.
MCAC80N10Y
Min Typ Max Unit
100 V
±100
nA
1 µA
30 µA
123V
3.3 4.3
mΩ
4.5 6.3
1.3 V
6124
792
15
101.6
20.6
28.7
28.2
7.5
81.9
20.1
pF
nC
ns
Rev.3-1-06272019
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