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MCC

MCAC80N10Y Datasheet Preview

MCAC80N10Y Datasheet

N-CHANNEL MOSFET

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MCAC80N10Y
Features
• Advanced Trench Cell Design
• High Speed Switch
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 1.47°C/W Junction to Case(Note 1)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Volltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Total Power Dissipation
PD
Note: 1.Surface Mounted on FR4 Board, t10 sec.
Rating
100
±20
80
150
85
Unit
V
V
A
A
W
Internal Structure
D D DD
8 7 65
1 2 34
S S SG
N-CHANNEL
MOSFET
DFN5060
HD
B
A
PIN 1
J
G
C
N
E
F
K
M
L
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
A 0.031 0.047 0.80 1.20
B 0.010
0.254
C 0.193 0.222 4.90 5.64
D 0.232 0.250 5.90 6.35
E 0.148 0.167 3.75 4.25
F 0.126 0.154 3.20 3.92
G 0.189 0.213 4.80 5.40
H 0.222 0.239 5.65 6.06
K 0.045 0.059 1.15 1.50
J 0.012 0.020 0.30 0.50
L 0.046 0.054 1.17 1.37
M 0.012 0.028 0.30 0.71
N 0.016 0.028 0.40 0.71
NOTE
TYP.
Rev.3-1-06272019
1/3
MCCSEMI.COM




MCC

MCAC80N10Y Datasheet Preview

MCAC80N10Y Datasheet

N-CHANNEL MOSFET

No Preview Available !

Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±20V
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
IDSS
VDS=60V, VGS=0V, TJ=85°C
Gate-Threshold Voltage(Note 2)
VGS(th) VDS=VGS, ID=250µA
Drain-Source On-Resistance(Note 2)
RDS(on)
VGS=10V, ID=40A
VGS=4.5V, ID=20A
Diode Forward Voltage
VSD VGS=0V, IS=40A
Dynamic Characteristics(Note 3)
Input Capacitance
Ciss
Output Capacitance
Coss VDS=50V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDD=50V,VGS=10V,ID=40A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD =50V, ID=40A,RL=1.1Ω,
RG=4.7Ω
Turn-Off Fall Time
tf
Note 2. Pulse Test : Pulse Width300μs, Duty Cycle 1%.
3. Guaranteed by Design, Not Subject to Production Testing.
MCAC80N10Y
Min Typ Max Unit
100 V
±100
nA
1 µA
30 µA
123V
3.3 4.3
4.5 6.3
1.3 V
6124
792
15
101.6
20.6
28.7
28.2
7.5
81.9
20.1
pF
nC
ns
Rev.3-1-06272019
2/3
MCCSEMI.COM


Part Number MCAC80N10Y
Description N-CHANNEL MOSFET
Maker MCC
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