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MCC

MCM1208 Datasheet Preview

MCM1208 Datasheet

P-Channel MOSFET

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MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
MCM1208
Features
Advanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking:1208
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
Parameter
Drain-source Voltage
Drain Current-Continuous
Pulsed Drain Current (note1)
Gate-source Voltage
Rating
-12
-8
-28
f8
R©JA
Thermal Resistance Junction to Ambient(note1)
357
TJ
Operating Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
(1).Repetitive rating:Pluse width limited by junction temperature
Unit
V
A
A
V
к/W
к
к
Equivalent Circuit
P-Channel
Power MOSFET
DFN2020-6J
D
C
EA
B
L
N
J
K
H
F
M
G
1.DRAIN
2.DRAIN
3.GATE
4.SOURCE
5.DRAIN
6.DRAIN
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Dimensions
INCHES
MM
MIN
0.028
MAX
.032
0.008REF.
0000
0.002
0.076
0.082
0.076
0.082
0.031
0.033
0.039
0.041
0.008
0.008
0.016
---
0.018
0.026
0.026TYP.
0.010
0.014
0.007
0.013
MIN
MAX
0.700
0.800
0.203REF.
0.000
0.050
1.924
1.924
2.076
2.076
0.800
1.000
0.850
1.050
0.200
0.200
0.400
---
0.460
0.660
0.650TYP.
0.250
0.350
0.174
0326
NOTE
Revision: A
www.mccsemi.com
1 of 4
2016/02/03




MCC

MCM1208 Datasheet Preview

MCM1208 Datasheet

P-Channel MOSFET

No Preview Available !

ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
MCC
R
Micro Commercial Components
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VGS = 0V, ID =-250µA
VDS =-12V,VGS = 0V
VGS =±8V, VDS = 0V
VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-5A
VGS =-3.7V, ID =-4.6A
VGS =-2.5V, ID =-4.3A
VGS =-1.8V, ID =-1A
VGS =-1.5V, ID =-0.5A
VDS =-5V, ID =-5A
Dynamic characteristics (note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =-6V,VGS =0V,f =1MHz
f =1MHz
VDS =-6V,VGS =-4.5V,ID=-5A
VDD=-6V,VGEN=-4.5V,ID=-4A
RL=6,RGEN=1
Source-Drain Diode characteristics
Diode forward current
IS
Diode pulsed forward current
ISM
Diode Forward voltage (note 1)
VDS
VGS =0V, IS=-4A
Diode reverse recovery time (note 2)
Diode reverse recovery charge (note 2)
trr
Qrr
IF=-4A,dI/dt=100A/µs
Notes : 1. Pulse test; pulse width300μs, duty cycle2%.
Min Typ Max Unit
-12
V
-1
µA
±0.1 uA
-0.4
-1
V
28
32
40
m
63
150
18
S
1275
pF
255
pF
236
pF
1.9
19
14
21
nC
2.3
nC
3.6
nC
26
40
ns
24
40
ns
45
70
ns
20
35
ns
-8
A
-28
A
-1.2
V
24
48
ns
8
16
nC
Revision: A
www.mccsemi.com
2 of 4
2016/02/03


Part Number MCM1208
Description P-Channel MOSFET
Maker MCC
Total Page 3 Pages
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