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MCC

MCQ6005 Datasheet Preview

MCQ6005 Datasheet

Dual N-Channel Mosfet

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Features
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
MCQ6005
Dual
N-Channel
MOSFET
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 62.5°C/W Junction to Ambient
Parameter
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current (t10s) (Note 1)
Continuous Drain Current TC=100°C
Pulsed Drain Current (Note 2)
Total Power Dissipation
Symbol
VDS
VGS
ID
ID
IDM
PD
Rating
60
±20
5.0
3.5
24
2.0
Unit
V
V
A
A
A
W
Internal Structure:
D1 D1 D2 D2
8
7
6
5
1
S1
2
3
G1 S2
4
G2
C
HJ
SOP-8
D
B
A
F
E
K
G
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
NOTE
A 0.053 0.069 1.35 1.75
B 0.004 0.010 0.10 0.25
C 0.053 0.061 1.35 1.55
D 0.013 0.020 0.33 0.51
E 0.007 0.010 0.17 0.25
F 0.185 0.200 4.70 5.10
G
0.050
1.270
H 0.228 0.244 5.80 6.20
J 0.150 0.157 3.80 4.00
TYP.
K 0.016 0.050 0.40 1.27
θ 0° 8° 0° 8°
Suggested Solder Pad Layout
4.61mm
6.50mm
1.50mm
1.27mm 0.80mm
Rev.3-1-02012019
1/4
MCCSEMI.COM




MCC

MCQ6005 Datasheet Preview

MCQ6005 Datasheet

Dual N-Channel Mosfet

No Preview Available !

MCQ6005
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
Gate-Threshold Voltage(Note 3)
V(BR)DSS
IGSS
IDSS
VGS(th)
Drain-Source On-Resistance(Note 3) RDS(on)
Forward Tranconductance(Note 3)
gFS
Dynamic Characteristics(Note 4)
VGS=0V, ID=250µA
VDS=0V, VGS =±20V
VDS=60V, VGS=0V
VDS=VGS, ID=250µA
VGS=10V, ID=5A
VGS=4.5V, ID=5A
VDS=5V, ID=5A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switching Characteristics(Note 4)
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Drain-Source Diode Characteristics
VDS=30V,VGS=0V,f=1MHz
VGS=10V, VDD =30V
RG=3Ω, RL=6.7Ω
VDS =30V, VGS=10V
ID=5A
Diode Forward Voltage(Note 3)
Diode Forward Current(Note 2)
VSD
VGS=0V, IS=5A
IS
Min Typ Max Unit
60
V
±100
nA
1
µA
1.2
1.6
2.5
V
26
35
32
45
11
S
979
120
pF
100
5.2
3
ns
17
2.5
22
3.3
nC
5.2
1.2
V
5
A
Notes :
1. The Value In Any Given Application Depends On The User’s Specific Board Design.
2. Pulse Width Limited by Junction Temperature.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. These Parameters Have No Way to Verify.
Rev.3-1-02012019
2/4
MCCSEMI.COM


Part Number MCQ6005
Description Dual N-Channel Mosfet
Maker MCC
Total Page 3 Pages
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