MMS9012
Features
- SOT-23 Plastic-Encapsulate Transistors
- Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.
- Collector-current 0.5A
- Collector-base Voltage 40V
- Operating and storage junction temperature range: -55OC to +150OC
- Marking Code: J3Y
PNP Silicon Plastic-Encapsulate
Transistor
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100u Adc, IE=0)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1m Adc, IB=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100u Adc, IC=0)
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0)
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0)
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
40 --- Vdc 25 --- Vdc 5.0 --- Vdc --- 0.1 u Adc --- 0.1 u Adc --- 0.1 u Adc h FE(1)
DC Current Gain
(IC=50m Adc, VCE=1.0Vdc) h FE(2)
DCCurrent Gain
(IC=500m Adc, VCE=1.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500...
