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MCC

SI3407 Datasheet Preview

SI3407 Datasheet

P-Channel MOSFET

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MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking Code: 3407
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
VGS
PD
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Gate-source Voltage
Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
-30
-4.1
_+ 20
0.35
357
-55 to +150
-55 to +150
Equivalent Circuit
Unit
V
A
V
W
к/W
к
к
SI3407
P-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
2. SOURCE
CB
3. DRAIN
12
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
w w w.mccsemi.com
1 of 4
2016/07/01




MCC

SI3407 Datasheet Preview

SI3407 Datasheet

P-Channel MOSFET

No Preview Available !

MCC
R
Micro Commercial Components
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
BVDSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-24V,VGS = 0V
Gate-source leakage current
IGSS
VGS =±20V, VDS = 0V
Drain-source on-resistance (note 1)
RDS(on)
VGS =-10V, ID =-4.1A
VGS =-4.5V, ID =-3A
Forward tranconductance (note 1)
gFS
VDS =-5V, ID =-4A
Gate threshold voltage
VGS(th) VDS =VGS, ID =-250µA
Diode forward voltage (note 1)
VSD
IS=-1A,VGS=0V
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
VDS =-15V,VGS =0V,f =1MHz
Reverse transfer capacitance
Crss
Switching Characteristics (note 2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VGS=-10V,VDS=-15V,
RL=3.6,RGEN=3
Turn-off fall time
tf
Notes:
1. Pulse test: Pulse width 300µs, duty cycle 2%.
2. These parameters have no way to verify.
Min Typ
-30
50
68
5.5
-1 -1.4
700
120
75
8.6
5.0
28.2
13.5
Max Units
V
-1
µA
±100 nA
60 m
87 m
S
-3
V
-1
V
pF
pF
pF
ns
ns
ns
ns
Revision: A
www.mccsemi.com
2 of 4
2016/07/01


Part Number SI3407
Description P-Channel MOSFET
Maker MCC
Total Page 3 Pages
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