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DB104 Datasheet Preview

DB104 Datasheet

SILICON BRIDGE RECTIFIERS

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DB
+
0.255(6.5)
0.245(6.2)
0.350(8.9)
0.300(7.6)
0.335(8.51)
0.325(8.10)
0.020(.51)
0.016(.41)
0.205(5.2)
0.195(5.0)
0.135(3.4)
0.115(2.9)
0.185(4.69)
0.150(3.81)
0.060
(1.5)
Dimensions in inches and (millimeters)
DB101 THRU DB107
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Mounting Position: Any
Weight:0.02 ounce, 0.4 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load, for current capacitive load derate by 20%.
MDD Catalog Number
SYMBOLS DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNITS
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600 800 1000 VOLTS
Maximum RMS voltage
VRMS
35
70 140 280 420 560 700 VOLTS
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000 VOLTS
Maximum average forward output rectified current
0.06(1.5mm) lead lenth at TA=40 C (Note 2)
I(AV)
1.0 Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50.0 Amps
Rating for Fusing(t<8.3ms)
Maximum instantaneous forward voltage drop
per birdge element at 1.0A
I2t
VF
10 A2s
1.1 Volts
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
IR
CJ
RθJA
TJ
TSTG
10
0.5
25
40
-65 to +150
-65 to +150
µA
mA
pF
C/W
C
C
NOTES:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.Unit mounted on P.C. board with 0.51x 0.51(13x13mm) copper pads.
MDD ELECTRONIC




MDD

DB104 Datasheet Preview

DB104 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES DB101 THRU DB107
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4 Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
1
TJ=25 C
0.1 PULSE WIDTH=300 µs
1%DUTY CYCLE
0.01
0.6 0.8 1.0 1.2 1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100 TJ=25 C
10
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
40
30
20
10 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10 TJ=100 C
1
TJ=25 C
0.1
0.01 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
1
0.1
1.0
10 100
REVERSE VOLTAGE,VOLTS
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
MDD ELECTRONIC
100


Part Number DB104
Description SILICON BRIDGE RECTIFIERS
Maker MDD
Total Page 2 Pages
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