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KBP10 Datasheet Preview

KBP10 Datasheet

SILICON BRIDGE RECTIFIERS

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KBP005 THRU KBP10
KBP
0.600(15.24)
0.560(14.22)
0.500(12.70)
0.460(11.68)
0.460(11.68)
0.420(10.67)
+ AC -
0.035(0.9)DIA.
0.028(0.7)TPY.
0.50(12.7)
0.640(16.25)
MIN
MIN
0.105(2.67)
0.085(2.16)
0.160(4.1)
0.140(3.6)
0.200(5.08)
0.180(4.57)
Dimensions in inches and (millimeters)
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.375(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Mounting Position: Any
Weight:0.069 ounce, 1.95 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS KBP005 KBP01 KBP02 KBP04 KBP06 KBP08 KBP10 UNITS
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600 800
Maximum RMS voltage
VRMS
35
70 140 280 420 560
Maximum DC blocking voltage
VDC 50 100 200 400 600 800
Maximum average forward output rectified current
at TA=50 C(Note 2)
I(AV)
2.0
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
50.0
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
I2t
10
Maximum instantaneous forward voltage drop
per birdge element at 1.0A
VF
1.0
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
IR
10
0.5
Typical Junction Capacitance (Note 1)
CJ
20
Typical Thermal Resistance (Note 2)
RθJA
28
Operating junction temperature range
TJ
-60 to +150
storage temperature range
TSTG
-60 to +150
NOTES:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.Unit mounted on P.C. board with 0.47x 0.47(12x12mm) copper pads,0.375(9.5mm) lead length.
1000
700
1000
VOLTS
VOLTS
VOLTS
Amps
Amps
A2s
Volts
µA
mA
pF
C/W
C
C




MDD

KBP10 Datasheet Preview

KBP10 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES KBP005 THRU KBP10
FIG. 1- FORWARD CURRENT DERATING CURVE
2.0
1.6
1.2
0.8 Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0.6
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
1
TJ=25 C
0.1 PULSE WIDTH=300 µs
1%DUTY CYCLE
0.01
0.6 0.8 1.0 1.2 1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100 TJ=25 C
10
1
0.1
1.0
10 100
REVERSE VOLTAGE,VOLTS
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
40
30
20
10 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
TJ=100 C
1
0.1 TJ=25 C
0.01 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100


Part Number KBP10
Description SILICON BRIDGE RECTIFIERS
Maker MDD
Total Page 2 Pages
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